RENESAS RJH65T04BDPM-A0#T2

RENESAS · Thyristors & Power Discretes · MPN RJH65T04BDPM-A0#T2

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Specifications

Td(off)-
Pd - Power Dissipation65W
Td(on)35ns
Operating Temperature-
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)74nC
Reverse Recovery Time(trr)80ns
Switching Energy(Eoff)350uJ

Technical details

65W 60A 650V TO-3PFP Single IGBTs RoHS

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