RENESAS · Thyristors & Power Discretes · MPN RBN75H65T1FPQ-A0#CB0
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| Td(off) | 113ns |
|---|---|
| Pd - Power Dissipation | 312W |
| Td(on) | 29ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,75A |
| Gate Charge(Qg) | 54nC |
| Reverse Recovery Time(trr) | 72ns |
| Switching Energy(Eoff) | 1mJ |
312W 150A 650V TO-247A Single IGBTs RoHS