RENESAS · Thyristors & Power Discretes · MPN RBN40H125S1FPQ-A0#CB0
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| Td(off) | 124ns |
|---|---|
| Pd - Power Dissipation | 319W |
| Td(on) | 25ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.25kV |
| Reverse Transfer Capacitance (Cres) | 18pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.34V@15V,40A |
| Vce Saturation(VCE(sat)) | 2.34V@40A,15V |
| Reverse Recovery Time(trr) | 156ns |
| Switching Energy(Eoff) | 1.4mJ |
319W 80A 1.25kV TO-247A Single IGBTs RoHS