RENESAS RBN40H125S1FPQ-A0#CB0

RENESAS · Thyristors & Power Discretes · MPN RBN40H125S1FPQ-A0#CB0

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Specifications

Td(off)124ns
Pd - Power Dissipation319W
Td(on)25ns
Operating Temperature-
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.25kV
Reverse Transfer Capacitance (Cres)18pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.34V@15V,40A
Vce Saturation(VCE(sat))2.34V@40A,15V
Reverse Recovery Time(trr)156ns
Switching Energy(Eoff)1.4mJ

Technical details

319W 80A 1.25kV TO-247A Single IGBTs RoHS

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