RENESAS RBN25H125S1FPQ-A0#CB0

RENESAS · Thyristors & Power Discretes · MPN RBN25H125S1FPQ-A0#CB0

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Specifications

Td(off)109ns
Pd - Power Dissipation223W
Td(on)19ns
Operating Temperature-
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.25kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.34V@15V,25A
Gate Charge(Qg)56nC
Reverse Recovery Time(trr)102ns
Switching Energy(Eoff)800uJ

Technical details

223W 50A 1.25kV TO-247A Single IGBTs RoHS

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