RENESAS · Thyristors & Power Discretes · MPN RBN25H125S1FPQ-A0#CB0
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| Td(off) | 109ns |
|---|---|
| Pd - Power Dissipation | 223W |
| Td(on) | 19ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.25kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.34V@15V,25A |
| Gate Charge(Qg) | 56nC |
| Reverse Recovery Time(trr) | 102ns |
| Switching Energy(Eoff) | 800uJ |
223W 50A 1.25kV TO-247A Single IGBTs RoHS