OSEN · Thyristors & Power Discretes · MPN OGH50T65
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| Td(off) | 125ns |
|---|---|
| Td(on) | 45ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@50A,15V |
| Reverse Recovery Time(trr) | 50ns |
IGBT 650V 100A Through Hole TO-3PNB