OSEN OGH50T65

OSEN · Thyristors & Power Discretes · MPN OGH50T65

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Specifications

Td(off)125ns
Td(on)45ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))2.5V@50A,15V
Reverse Recovery Time(trr)50ns

Technical details

IGBT 650V 100A Through Hole TO-3PNB

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