onsemi SGR6N60UFTF

onsemi · Thyristors & Power Discretes · MPN SGR6N60UFTF

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Specifications

Pd - Power Dissipation30W
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)6A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Switching Energy(Eoff)-
Turn-On Energy (Eon)57uJ

Technical details

30W 6A 600V TO-252(DPAK) Single IGBTs RoHS

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