onsemi · Thyristors & Power Discretes · MPN SGP5N60RUFTU
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| Td(off) | 34ns |
|---|---|
| Pd - Power Dissipation | 60W |
| Td(on) | 13ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 8A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.8V@15V,5A |
| Gate Charge(Qg) | 24nC |
60W 8A 600V TO-220 Single IGBTs