onsemi SGL25N120RUFTU

onsemi · Thyristors & Power Discretes · MPN SGL25N120RUFTU

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Specifications

Pd - Power Dissipation270W
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Switching Energy(Eoff)1.63mJ
Turn-On Energy (Eon)1.6mJ

Technical details

270W 40A 1.2kV TO-264-3(TO-264AA) Single IGBTs RoHS

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