onsemi · Thyristors & Power Discretes · MPN SGL160N60UFDTU
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| Td(off) | 90ns |
|---|---|
| Pd - Power Dissipation | 250W |
| Td(on) | 40ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 200pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@80mA |
| Vce Saturation(VCE(sat)) | 2.6V@160A,15V |
| Reverse Recovery Time(trr) | 50ns |
| Switching Energy(Eoff) | 1.76mJ |
IGBT 600V 160A 250W Through Hole TO-264-3