onsemi · Thyristors & Power Discretes · MPN SGH15N120RUFTU
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| Td(off) | 60ns |
|---|---|
| Pd - Power Dissipation | 180W |
| Td(on) | 20ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 24A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@15V,15A |
| Gate Charge(Qg) | 108nC |
180W 24A 1.2kV TO-3P Single IGBTs RoHS