onsemi · Thyristors & Power Discretes · MPN SGH15N120RUFDTU
No reviews yet — be the first to review onsemi SGH15N120RUFDTU.
| Td(off) | 60ns |
|---|---|
| Pd - Power Dissipation | 180W |
| Td(on) | 20ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 24A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@15V,15A |
| Gate Charge(Qg) | 108nC |
| Reverse Recovery Time(trr) | 100ns |
180W 24A 1.2kV TO-3P Single IGBTs RoHS