onsemi SGF23N60UFTU

onsemi · Thyristors & Power Discretes · MPN SGF23N60UFTU

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Specifications

Pd - Power Dissipation75W
Td(off)60ns
Td(on)17ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)23A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)25pF
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@12mA
Vce Saturation(VCE(sat))2.6V@12A,15V
Switching Energy(Eoff)135uJ
Turn-On Energy (Eon)115uJ

Technical details

75W 23A 600V PT (Punch-Through) TO-3PF Single IGBTs RoHS

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