onsemi · Thyristors & Power Discretes · MPN NXH350N100H4Q2F2P1G
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| Pd - Power Dissipation | 276W |
|---|---|
| Current - Collector(Ic) | 303A |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Input Capacitance(Cies) | 24.146nF@20V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
276W 303A 1kV FS (Field Stop) Q2PACK-42(47x93) IGBT Modules RoHS