onsemi · Thyristors & Power Discretes · MPN NXH300B100H4Q2F2S1G
No reviews yet — be the first to review onsemi NXH300B100H4Q2F2S1G.
| Pd - Power Dissipation | 194W |
|---|---|
| Current - Collector(Ic) | 73A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.118kV |
| Input Capacitance(Cies) | 6.323nF@20V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.25V@15V,100A |
| Operating Temperature | -40℃~+175℃@(Tj) |
194W 73A 1.118kV FS (Field Stop) Q2PACK-53(47x93) IGBT Modules RoHS