onsemi · Thyristors & Power Discretes · MPN NXH25C120L2C2SG
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| Td(off) | 235ns |
|---|---|
| Td(on) | 68ns |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 117pF |
| Input Capacitance(Cies) | 6.2nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@3.04mA |
| Gate Charge(Qg) | 269nC@15V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.4V@25A,15V |
| Switching Energy(Eoff) | 720uJ |
| Turn-On Energy (Eon) | 2.2mJ |
25A 1.2kV DIP-26 IGBT Modules RoHS