onsemi · Thyristors & Power Discretes · MPN NXH200B100H4F2SG
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| Pd - Power Dissipation | 93W |
|---|---|
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Input Capacitance(Cies) | 6.523nF@20V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,100A |
| Operating Temperature | -40℃~+150℃@(Tj) |
93W 100A 1kV FS (Field Stop) PIM-36(56.7x48) IGBT Modules RoHS