onsemi NGTD23T120F2WP

onsemi · Thyristors & Power Discretes · MPN NGTD23T120F2WP

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Specifications

Operating Temperature	-55℃~+175℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Turn-On Energy (Eon)	-

Technical details

1.2kV FS (Field Stop) SMD Single IGBTs RoHS

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