onsemi · Thyristors & Power Discretes · MPN NGTD20T120F2WP
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Td(on) | - |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@400uA |
| Vce Saturation(VCE(sat)) | 2V@20A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
1.2kV FS (Field Stop) SMD Single IGBTs RoHS