onsemi · Thyristors & Power Discretes · MPN NGTD14T65F2WP
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| Operating Temperature | -55℃~+175℃@(Tj) |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Turn-On Energy (Eon) | - |
650V FS (Field Stop) SMD Single IGBTs RoHS