onsemi · Thyristors & Power Discretes · MPN NGTB50N60L2WG
No reviews yet — be the first to review onsemi NGTB50N60L2WG.
| Td(off) | 270ns |
|---|---|
| Pd - Power Dissipation | 500W |
| Td(on) | 110ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 310nC |
| Reverse Recovery Time(trr) | 67ns |
500W 100A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS