onsemi · Thyristors & Power Discretes · MPN NGTB50N60FWG
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| Pd - Power Dissipation | 223W |
|---|---|
| Td(off) | 285ns |
| Td(on) | 117ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 170pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@350uA |
| Vce Saturation(VCE(sat)) | 1.7V@50A,15V |
| Reverse Recovery Time(trr) | 77ns |
| Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 1.1mJ |
223W 50A 600V TO-247 Single IGBTs RoHS