onsemi · Thyristors & Power Discretes · MPN NGTB50N120FL2WG
No reviews yet — be the first to review onsemi NGTB50N120FL2WG.
| Pd - Power Dissipation | 267W |
|---|---|
| Td(off) | 282ns |
| Td(on) | 118ns |
| Operating Temperature | -55℃~+175℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 139pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@400uA |
| Vce Saturation(VCE(sat)) | 2.4V@50A,15V |
| Reverse Recovery Time(trr) | 256ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 4.4mJ |
267W 50A 1.2kV TO-247 Single IGBTs RoHS