onsemi · Thyristors & Power Discretes · MPN NGTB45N60SWG
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| Pd - Power Dissipation | 250W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 90A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 376ns |
| Switching Energy(Eoff) | 550uJ |
250W 90A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS