onsemi · Thyristors & Power Discretes · MPN NGTB40N65IHL2WG
No reviews yet — be the first to review onsemi NGTB40N65IHL2WG.
| Td(off) | 140ns |
|---|---|
| Pd - Power Dissipation | 300W |
| Operating Temperature | - |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 135nC |
| Reverse Recovery Time(trr) | 465ns |
300W 80A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS