onsemi · Thyristors & Power Discretes · MPN NGTB40N65FL2WG
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| Pd - Power Dissipation | 366W |
|---|---|
| Td(off) | 177ns |
| Td(on) | 84ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 115pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.65mA |
| Vce Saturation(VCE(sat)) | 2V@40A,15V |
| Reverse Recovery Time(trr) | 172ns |
| Switching Energy(Eoff) | 440uJ |
| Turn-On Energy (Eon) | 970uJ |
366W 80A 650V FS (Field Stop) TO-247 Single IGBTs RoHS