onsemi · Thyristors & Power Discretes · MPN NGTB40N120L3WG
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| Td(off) | 150ns |
|---|---|
| Pd - Power Dissipation | 454W |
| Operating Temperature | - |
| Td(on) | 18ns |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 220nC |
| Reverse Recovery Time(trr) | 86ns |
| Switching Energy(Eoff) | 1.5mJ |
| Turn-On Energy (Eon) | 1.5mJ |
454W 160A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS