onsemi · Thyristors & Power Discretes · MPN NGTB40N120FL3WG
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| Td(off) | 145ns |
|---|---|
| Pd - Power Dissipation | 454W |
| Td(on) | 18ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 80pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.95V@40A,15V |
| Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.1mJ |
IGBT FS (Field Stop) 1.2kV 160A 454W Through Hole TO-247