onsemi · Thyristors & Power Discretes · MPN NGTB40N120FL2WG
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| Td(off) | 286ns |
|---|---|
| Pd - Power Dissipation | 267W |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 116ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 140pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@400uA |
| Vce Saturation(VCE(sat)) | 2.4V@40A,15V |
| Reverse Recovery Time(trr) | 240ns |
| Switching Energy(Eoff) | 1.1mJ |
| Turn-On Energy (Eon) | 3.4mJ |
267W 40A 1.2kV TO-247 Single IGBTs RoHS