onsemi · Thyristors & Power Discretes · MPN NGTB25N120FL3WG
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| Td(off) | 109ns |
|---|---|
| Pd - Power Dissipation | 349W |
| Td(on) | 15ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 52pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@400uA |
| Vce Saturation(VCE(sat)) | 1.95V@25A,15V |
| Reverse Recovery Time(trr) | 114ns |
| Switching Energy(Eoff) | 700uJ |
IGBT FS (Field Stop) 1.2kV 100A 349W Through Hole TO-247