onsemi NGTB25N120FL2WG

onsemi · Thyristors & Power Discretes · MPN NGTB25N120FL2WG

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Specifications

Td(off)179ns
Pd - Power Dissipation385W
Td(on)87ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)81pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.5V
Vce Saturation(VCE(sat))2V
Collector Cut-Off Current (Ices)400uA
Reverse Recovery Time(trr)154ns

Technical details

IGBT 1.2kV 50A 385W Through Hole TO-247

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