onsemi · Thyristors & Power Discretes · MPN NGTB20N135IHRWG
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| Td(off) | 245ns |
|---|---|
| Pd - Power Dissipation | 394W |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Reverse Transfer Capacitance (Cres) | 100pF |
| Input Capacitance(Cies) | 5.29nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Output Capacitance(Coes) | 124pF |
| Vce Saturation(VCE(sat)) | 2.65V@20A,15V |
| Gate Charge(Qg) | 234nC |
IGBT FS (Field Stop) 1.35kV 40A 394W Through Hole TO-247