onsemi · Thyristors & Power Discretes · MPN NGTB20N120IHRWG
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| Td(off) | 235ns |
|---|---|
| Pd - Power Dissipation | 384W |
| Td(on) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 225nC |
| Switching Energy(Eoff) | 450uJ |
| Turn-On Energy (Eon) | - |
384W 40A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS