onsemi NGTB15N120FL2WG

onsemi · Thyristors & Power Discretes · MPN NGTB15N120FL2WG

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Specifications

Td(off)132ns
Pd - Power Dissipation294W
Td(on)64ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)50pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@400uA
Vce Saturation(VCE(sat))2.4V@15A,15V
Reverse Recovery Time(trr)110ns
Switching Energy(Eoff)370uJ

Technical details

IGBT FS (Field Stop) 1.2kV 30A 294W Through Hole TO-247

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