onsemi · Thyristors & Power Discretes · MPN NGB8207ABNT4G
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| Pd - Power Dissipation | 165W |
|---|---|
| Td(off) | - |
| Td(on) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 365V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@3.7V,10A |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
165W 20A 365V D2PAK Single IGBTs RoHS