onsemi · Thyristors & Power Discretes · MPN NGB8206ANT4G
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 390V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@4.5V,20A |
| Turn-On Energy (Eon) | - |
150W 20A 390V D2PAK Single IGBTs RoHS