onsemi · Thyristors & Power Discretes · MPN ISL9V5045S3ST-F085
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| Td(off) | 10.8us |
|---|---|
| Pd - Power Dissipation | 300W |
| Td(on) | 700ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 51A |
| Collector-Emitter Breakdown Voltage (Vces) | 480V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V |
| Vce Saturation(VCE(sat)) | 1.25V |
| Gate Charge(Qg) | 32nC@5V |
| Collector Cut-Off Current (Ices) | 25uA |
300W 51A 480V TO-263AB Single IGBTs RoHS