onsemi · Thyristors & Power Discretes · MPN ISL9V5036P3-F085C
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| Td(off) | 10.8us |
|---|---|
| Pd - Power Dissipation | 250W |
| Td(on) | 700ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 46A |
| Collector-Emitter Breakdown Voltage (Vces) | 390V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.6V@4V,10A |
| Vce Saturation(VCE(sat)) | 1.8V@15A,4.5V |
| Gate Charge(Qg) | 32nC |
| Collector Cut-Off Current (Ices) | 1mA |
250W 46A 390V TO-220-3 Single IGBTs RoHS