onsemi · Thyristors & Power Discretes · MPN ISL9V3040P3
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| Td(off) | 4.8us |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | 700ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 21A |
| Collector-Emitter Breakdown Voltage (Vces) | 430V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.3V@1mA |
| Vce Saturation(VCE(sat)) | 1.6V@6A,4V |
| Gate Charge(Qg) | 17nC |
| Collector Cut-Off Current (Ices) | 25uA |
IGBT 430V 21A 150W Through Hole TO-220