onsemi · Thyristors & Power Discretes · MPN ISL9V3040D3STV
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| Td(off) | 4.8us |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | 4us |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 21A |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@1mA |
| Vce Saturation(VCE(sat)) | 1.65V@6A,4V |
| Collector Cut-Off Current (Ices) | 1mA |
| Reverse Recovery Time(trr) | 2.1us |
| Turn-On Energy (Eon) | - |
150W 21A 400V DPAK Single IGBTs RoHS