onsemi · Thyristors & Power Discretes · MPN ISL9V3036S3STSB82029A
No reviews yet — be the first to review onsemi ISL9V3036S3STSB82029A.
| Td(off) | 4.8us |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 21A |
| Collector-Emitter Breakdown Voltage (Vces) | 360V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.6V@4V,6A |
| Gate Charge(Qg) | 17nC |
| Turn-On Energy (Eon) | - |
150W 21A 360V D2PAK(TO-263) Single IGBTs RoHS