onsemi · Thyristors & Power Discretes · MPN ISL9V2540S3ST
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| Td(off) | 3.64us |
|---|---|
| Pd - Power Dissipation | 166.7W |
| Td(on) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 15.5A |
| Collector-Emitter Breakdown Voltage (Vces) | 430V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@4V,6A |
| Gate Charge(Qg) | 15.1nC |
| Turn-On Energy (Eon) | - |
166.7W 15.5A 430V TO-263AB Single IGBTs RoHS