onsemi · Thyristors & Power Discretes · MPN ISL9V2040S3S
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| Pd - Power Dissipation | 130W |
|---|---|
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 430V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Turn-On Energy (Eon) | - |
130W 10A 430V D2PAK(TO-263) Single IGBTs RoHS