onsemi · Thyristors & Power Discretes · MPN HGTP5N120CN
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| Pd - Power Dissipation | 167W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
167W 25A 1.2kV NPT (Non-Punch Through) TO-220AB Single IGBTs