onsemi · Thyristors & Power Discretes · MPN HGTP5N120BND
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| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 167W |
| Td(on) | 22ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 21A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@45uA |
| Vce Saturation(VCE(sat)) | 2.7V@5A,15V |
| Gate Charge(Qg) | 53nC |
| Reverse Recovery Time(trr) | 65ns |
| Switching Energy(Eoff) | 450uJ |
IGBT NPT (Non-Punch Through) 1.2kV 21A 167W Through Hole TO-220AB