onsemi HGTP14N44G3VL

onsemi · Thyristors & Power Discretes · MPN HGTP14N44G3VL

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Specifications

Pd - Power Dissipation231W
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)27A
Collector-Emitter Breakdown Voltage (Vces)490V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Turn-On Energy (Eon)-

Technical details

231W 27A 490V TO-220AB Single IGBTs

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