onsemi · Thyristors & Power Discretes · MPN HGTP10N120BN
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| Td(off) | 165ns |
|---|---|
| Pd - Power Dissipation | 298W |
| Td(on) | 23ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@90uA |
| Vce Saturation(VCE(sat)) | 2.7V@10A,15V |
| Gate Charge(Qg) | 100nC |
| Switching Energy(Eoff) | 800uJ |
IGBT NPT (Non-Punch Through) 1.2kV 35A 298W Through Hole TO-220AB