onsemi · Thyristors & Power Discretes · MPN HGTG40N60B3
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| Pd - Power Dissipation | 290W |
|---|---|
| Td(off) | 170ns |
| Operating Temperature | - |
| Td(on) | 47ns |
| Current - Collector(Ic) | 70A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,40A |
| Gate Charge(Qg) | 250nC |
| Turn-On Energy (Eon) | 1.05mJ |
290W 70A 600V TO-247-3 Single IGBTs RoHS