onsemi · Thyristors & Power Discretes · MPN HGTG30N60B3_NL
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| Td(off) | 137ns |
|---|---|
| Pd - Power Dissipation | 208W |
| Td(on) | 36ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 250nC |
| Switching Energy(Eoff) | 680uJ |
| Turn-On Energy (Eon) | 550uJ |
208W 60A 600V NPT (Non-Punch Through) TO-247 Single IGBTs RoHS