onsemi · Thyristors & Power Discretes · MPN HGTG20N60B3-FS
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| Pd - Power Dissipation | 165W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 135nC |
| Turn-On Energy (Eon) | - |
165W 40A 600V TO-247 Single IGBTs RoHS