onsemi · Thyristors & Power Discretes · MPN HGTG18N120BND
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| Pd - Power Dissipation | 390W |
|---|---|
| Td(off) | 170ns |
| Td(on) | 23ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 54A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,18A |
| Gate Charge(Qg) | 165nC |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 1.8mJ |
| Turn-On Energy (Eon) | 1.9mJ |
390W 54A 1.2kV NPT (Non-Punch Through) TO-247-3 Single IGBTs RoHS